Advanced Ceramic X
HI1005-1C1N8SMT
Ind RF Chip Multi-Layer 1.8nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 0402 T/R
Package0402
Inductance1.8nH
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Technical Specifications
Advanced Ceramic X HI1005-1C1N8SMT technical specifications.
General
Package/Case
0402
Core Material
Ceramic
Depth
0.6mm
Height
0.6mm
Inductance
1.8nH
Max DC Current
300mA
Radiation Hardening
No
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Advanced Ceramic X HI1005-1C1N8SMT Datasheet
Download the complete datasheet for Advanced Ceramic X HI1005-1C1N8SMT to view detailed technical specifications.
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