Advanced Ceramic X
HI1005-1C8N2JMT
Ind RF Chip Multi-Layer 8.2nH 5% 100MHz 8Q-Factor Ceramic 250mA 0402 T/R
Package0402
Inductance8.2nH
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Technical Specifications
Advanced Ceramic X HI1005-1C8N2JMT technical specifications.
General
Package/Case
0402
Core Material
Ceramic
Depth
0.6mm
Height
0.6mm
Inductance
8.2nH
Max DC Current
250mA
Radiation Hardening
No
RoHS Compliant
Yes
Tolerance
5%
Compliance
RoHS
Compliant
Datasheet
Advanced Ceramic X HI1005-1C8N2JMT Datasheet
Download the complete datasheet for Advanced Ceramic X HI1005-1C8N2JMT to view detailed technical specifications.
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