N-channel enhancement-mode power MOSFET rated for 30 V drain-source voltage and 60 A continuous drain current. It is specified with 0.85 mΩ maximum on-resistance at 10 V gate drive and 1.15 mΩ maximum at 4.5 V. The device is offered in a PMPAK-5x6 surface-mount package and has total gate charge of 75 to 120 nC with input capacitance of 7300 to 11680 pF. Maximum power dissipation is 40 W, junction temperature is rated to 150 °C, and the device is RoHS compliant and halogen-free.
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| Channel Type | N-Channel |
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 60A |
| On-Resistance @ VGS=10V | 0.85 maxmΩ |
| On-Resistance @ VGS=4.5V | 1.15 maxmΩ |
| Input Capacitance | 7300 to 11680pF |
| Total Gate Charge | 75 to 120nC |
| Power Dissipation | 40W |
| Thermal Resistance, Junction-to-Case | 1.8°C/W |
| Thermal Resistance, Junction-to-Ambient | 25°C/W |
| Operating Junction Temperature Range | -55 to 150°C |
| Storage Temperature Range | -55 to 150°C |
| RoHS | Compliant |
| Halogen Free | Yes |
