The BLV11 NPN transistor is packaged in a SOT-123 case and available in tray packaging. It can handle a maximum collector-emitter voltage of 18V and a continuous collector current of 3A, with a maximum collector current of 8A. The transistor has a minimum current gain of 10 and an emitter base voltage of 4V. It operates over a temperature range of -65°C to 200°C and has a maximum power dissipation of 36W at 250 MHz.
Frequency250 MHz
PackageSOT-123
PolarityNPN
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Technical Specifications
Advanced Semiconductor BLV11 technical specifications.
General
| Package/Case | SOT-123 |
| Collector-emitter Voltage-Max | 18V |
| Continuous Collector Current | 3A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 10 |
| Max Collector Current | 8A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Operating Frequency | 250 MHz |
| Packaging | Tray |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Semiconductor BLV11 Datasheet
Download the complete datasheet for Advanced Semiconductor BLV11 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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