The BLV21 NPN transistor is packaged in a SOT-123 case and is designed for operation at frequencies up to 175 MHz. It can handle a maximum collector-emitter voltage of 35V and a continuous collector current of 1.75A. The transistor has a minimum current gain of 5 and a maximum power dissipation of 36W. It can operate over a temperature range of -65°C to 200°C.
Frequency175 MHz
PackageSOT-123
PolarityNPN
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Technical Specifications
Advanced Semiconductor BLV21 technical specifications.
General
| Package/Case | SOT-123 |
| Collector-emitter Voltage-Max | 35V |
| Continuous Collector Current | 1.75A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 5 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 36W |
| Operating Frequency | 175 MHz |
| Packaging | Tray |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Semiconductor BLV21 Datasheet
Download the complete datasheet for Advanced Semiconductor BLV21 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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