Frequency108 MHz
PolarityNPN
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Technical Specifications
Advanced Semiconductor BLV25 technical specifications.
General
| Collector-emitter Voltage-Max | 33V |
| Continuous Collector Current | 17.5A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 15 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 220W |
| Operating Frequency | 108 MHz |
| Packaging | Tray |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Semiconductor BLV25 Datasheet
Download the complete datasheet for Advanced Semiconductor BLV25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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