Frequency108 MHz
PolarityNPN
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Technical Specifications
Advanced Semiconductor BLV25 technical specifications.
General
Collector-emitter Voltage-Max
33V
Continuous Collector Current
17.5A
Emitter Base Voltage (VEBO)
4V
hFE Min
15
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
220W
Operating Frequency
108 MHz
Packaging
Tray
Polarity
NPN
Compliance
RoHS
Compliant
Datasheet
Advanced Semiconductor BLV25 Datasheet
Download the complete datasheet for Advanced Semiconductor BLV25 to view detailed technical specifications.
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