Advanced Semiconductor
BLV57
NPN Transistor, 27V Collector-emitter Voltage, 4A Collector Current, TO-220 Package
The BLV57 NPN transistor from Advanced Semiconductor features a collector-emitter voltage of 27V and a maximum collector current of 4A. It operates within a temperature range of -65°C to 200°C and has a maximum power dissipation of 77W. The transistor is packaged in a TO-220 format, suitable for through-hole mounting.
Frequency860 MHz
PolarityNPN
Quick Jump:
Technical Specifications
Advanced Semiconductor BLV57 technical specifications.
General
| Collector-emitter Voltage-Max | 27V |
| Continuous Collector Current | 2A |
| Emitter Base Voltage (VEBO) | 3.5V |
| hFE Min | 15 |
| Max Collector Current | 4A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 77W |
| Operating Frequency | 860 MHz |
| Packaging | Tray |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Semiconductor BLV57 Datasheet
Download the complete datasheet for Advanced Semiconductor BLV57 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.