The BLW98 NPN transistor from Advanced Semiconductor features a maximum collector-emitter voltage of 25V and a continuous collector current of 2A. It can handle a maximum collector current of 4A and has a maximum power dissipation of 21.5W. The transistor operates within a temperature range of -65°C to 200°C and has a high current gain of 15. It is packaged in a tray format and has a high operating frequency of 860 MHz.
Frequency860 MHz
PolarityNPN
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Technical Specifications
Advanced Semiconductor BLW98 technical specifications.
General
| Collector-emitter Voltage-Max | 25V |
| Continuous Collector Current | 2A |
| Emitter Base Voltage (VEBO) | 3.5V |
| hFE Min | 15 |
| Max Collector Current | 4A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 21.5W |
| Operating Frequency | 860 MHz |
| Packaging | Tray |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Semiconductor BLW98 Datasheet
Download the complete datasheet for Advanced Semiconductor BLW98 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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