The AFBR-S4K33C0115L is a high-performance Silicon Photomultiplier (SiPM) array based on the Near Ultraviolet High-Density (NUV-HD) technology. It is designed for ultra-sensitive measurement of single photons and is particularly sensitive to the blue and near-UV spectrum. The device utilizes Through-Silicon-Via (TSV) technology to achieve high packing density and features a 3.0 x 3.0 mm active area per channel. It is commonly used for detecting scintillation light from materials like LSO, LYSO, and BGO in medical and high-energy physics applications.
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| Active Area | 3.0 x 3.0mm |
| Photon Detection Efficiency (PDE) | 54 at 420 nm% |
| Cell Pitch | 30 x 30µm |
| Breakdown Voltage Uniformity (3 Sigma) | 180mV |
| Operating Temperature Range | -40 to +85°C |
| Number of Channels | 1 (Single) |
| RoHS | Compliant |
| REACH | Compliant |
Download the complete datasheet for Broadcom AFBR-S4K33C0115L to view detailed technical specifications.
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