RF Field-Effect Transistor, N-Channel, Gallium Arsenide (GaAs) technology, designed for X-band operation with a 2 GHz operating frequency. Features a low noise figure of 0.5dB and a gain of 15dB. Continuous drain current (ID) up to 305mA and a drain-to-source voltage (Vdss) of 5.5V. Packaged in a plastic SC-70 (SOT-343) surface mount package with tin, matte contact plating. Maximum power dissipation is 600mW, with an operating temperature range of -65°C to 160°C.
Frequency2GHz
PackageSOT-343
Voltage Rating5.5V
MountingSurface Mount
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Technical Specifications
Broadcom ATF-33143-BLKG technical specifications.
General
Package/Case
SOT-343
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
305mA
Drain to Source Voltage (Vdss)
5.5V
Dual Supply Voltage
5.5V
Frequency
2GHz
Gain
15dB
Gate to Source Voltage (Vgs)
-5V
Max Operating Temperature
160°C
Min Operating Temperature
-65°C
Max Power Dissipation
600mW
Mount
Surface Mount
Noise Figure
0.5dB
Nominal Vgs
-5V
Operating Frequency
2 GHz
Package Quantity
100
Packaging
Bag
Polarity
N-CHANNEL
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Technology
GAAS
Termination
SMD/SMT
Test Voltage
4V
Voltage Rating
5.5V
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-33143-BLKG Datasheet
Download the complete datasheet for Broadcom ATF-33143-BLKG to view detailed technical specifications.
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