The CEL NE58219-A is a surface mount NPN transistor with a collector emitter breakdown voltage of 12V and a maximum collector current of 60mA. It has a maximum power dissipation of 100mW and a transition frequency of 5GHz. The device is packaged in bulk and has a package quantity of one.
MountingSurface Mount
PolarityNPN
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Technical Specifications
CEL NE58219-A technical specifications.
General
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 60mA |
| Emitter Base Voltage (VEBO) | 3V |
| hFE Min | 120 |
| Max Collector Current | 60mA |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Transition Frequency | 5GHz |
Compliance
| RoHS | Compliant |
Datasheet
CEL NE58219-A Datasheet
Download the complete datasheet for CEL NE58219-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.