The CEL NE651R479A-EVPW26 is a N-Channel GaAs FET with a continuous drain current of 1A and a drain to source breakdown voltage of 8V. It operates at a maximum frequency of 1.9GHz and has a gain of 12dB. The device can withstand a maximum gate to source voltage of -4V and a maximum operating temperature of 125°C. The power dissipation is limited to 2.5W.
Frequency1.9GHz
PackageA
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
CEL NE651R479A-EVPW26 technical specifications.
General
| Package/Case | A |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Voltage (Vdss) | 8V |
| Frequency | 1.9GHz |
| Gain | 12dB |
| Gate to Source Voltage (Vgs) | -4V |
| Max Operating Temperature | 125°C |
| Max Power Dissipation | 2.5W |
| P1dB | 27dBm |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Technology | GAAS |
Compliance
| RoHS | Not Compliant |
Datasheet
CEL NE651R479A-EVPW26 Datasheet
Download the complete datasheet for CEL NE651R479A-EVPW26 to view detailed technical specifications.
No datasheet is available for this part.