GS61008P
GaN Systems
The GSWP100W-EVBPA uses GaN Systems’ GS61008P E-HEMTs in a 6.78MHz class EF2 power amplifier.
Design DocumentInfineon
GSWP100W-EVBPA 100W GaN E-HEMT Wireless Power Transfer Evaluation Board Technical Manual
Technical manual for the GSWP100W-EVBPA, a 100W Class EF2 power amplifier for 6.78 MHz magnetic resonant wireless power transfer using GaN E-HEMTs and LMG1210 drivers.
Overview
This technical manual details the GSWP100W-EVBPA evaluation board, a 100W power amplifier optimized for 6.78 MHz magnetic resonant wireless power transfer (WPT). The design employs GaN Systems GS61008P E-HEMTs and Texas Instruments LMG1210 high-speed gate drivers in a push-pull Class EF2 configuration. The document includes circuit descriptions, block diagrams, hardware requirements, and configuration options such as EMI filtering and external oscillator inputs. The board is designed to showcase the high-frequency switching capabilities of GaN technology, enabling WPT systems with up to 95% efficiency and spatial freedom up to 50mm.
Use Cases
- Evaluation of 6.78 MHz magnetic resonant wireless power transfer systems
- Development of high-efficiency 100W wireless charging transmitters
- Testing GaN E-HEMT switching performance in high-frequency power applications
- Prototyping resonant WPT systems requiring spatial freedom
Topics
GSWP100W-EVBPA
GaN E-HEMT
GS61008P
LMG1210
Wireless Power Transfer
Class EF2 Amplifier
6.78MHz
Magnetic Resonant Charging
Push-Pull Configuration
Infineon
GaN Systems
Referenced Parts
LMG1210
Texas Instruments
The GS61008Ps are used with the integrated high-speed TI LMG1210 gate driver in a push-pull configuration.
| GS61008P | GaN Systems | The GSWP100W-EVBPA uses GaN Systems’ GS61008P E-HEMTs in a 6.78MHz class EF2 power amplifier. |
| LMG1210 | Texas Instruments | The GS61008Ps are used with the integrated high-speed TI LMG1210 gate driver in a push-pull configuration. |
| PE29102 | Peregrine Semiconductor | TP197 U90 input (PE29102 driver) TP76 U6 input (PE29102 driver) |