The BC639 is a TO-92 packaged NPN transistor with a maximum collector-emitter voltage of 80V and a continuous collector current of 1A. It has a maximum power dissipation of 625mW and operates over a temperature range of -55°C to 150°C. The transistor features a gain bandwidth product of 200MHz and a collector-emitter saturation voltage of 500mV.
PackageTO-92
PolarityNPN
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Technical Specifications
Diodes BC639 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 80V |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 200MHz |
| Height | 4.01mm |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Polarity | NPN |
| RoHS Compliant | No |
| Series | BC639 |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BC639 Datasheet
Download the complete datasheet for Diodes BC639 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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