NPN bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a continuous collector current of 100mA. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. Packaged in a compact SOT-523 surface-mount plastic package, this silicon transistor offers a transition frequency of 250MHz.
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| Package/Case | SOT-523 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Height | 0.75mm |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Length | 1.6mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 50V |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
| RoHS | Not Compliant |
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