N-Channel JFET, surface mount, featuring 30V drain-source voltage and 1.1A continuous drain current. Offers a maximum drain-source on-resistance of 240mR at 3V gate-source voltage. This silicon metal-oxide semiconductor FET operates within a -55°C to 150°C temperature range and has a power dissipation of 500mW. Packaged in SC-59, 3-pin configuration, it is RoHS compliant and lead-free.
PackageSC
Current Rating1.1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN100-7-F technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 1.1A |
| Current Rating | 1.1A |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 240MR |
| Dual Supply Voltage | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.3mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 240mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 30V |
| Weight | 0.000282oz |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN100-7-F Datasheet
Download the complete datasheet for Diodes DMN100-7-F to view detailed technical specifications.
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