
NPN silicon bipolar junction transistor in a SOT-89 surface mount plastic package. Features a 50V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 3A. Offers a maximum power dissipation of 2W and a transition frequency of 165MHz. Operates across a temperature range of -55°C to 150°C. This lead-free component is REACH SVHC compliant.
Diodes FCX619TA technical specifications.
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