NPN bipolar junction transistor for small signal applications. Features a 400V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 50MHz transition frequency and a maximum power dissipation of 1W. Packaged in a SOT-89 surface-mount case, this silicon transistor is RoHS compliant and suitable for a wide temperature range from -55°C to 150°C.
Frequency50MHz
PackageSOT-89
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes FCX658ATA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
400V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
400V
Collector-emitter Voltage-Max
200mV
Continuous Collector Current
500mA
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
400V
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
400V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes FCX658ATA Datasheet
Download the complete datasheet for Diodes FCX658ATA to view detailed technical specifications.
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