NPN bipolar junction transistor (BJT) for small signal applications. Features a 140V collector-emitter breakdown voltage (VCEO) and a 1A continuous collector current. Operates with a 100MHz transition frequency and a maximum power dissipation of 1W. Housed in a TO-92 compatible E-line package, suitable for through-hole mounting. This silicon transistor offers a wide operating temperature range from -55°C to 200°C and is RoHS and REACH SVHC compliant.
Frequency100MHz
PackageTO-92
Current Rating1A
MountingThrough Hole
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Technical Specifications
Diodes ZTX455 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
160V
Collector Emitter Breakdown Voltage
140V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
140V
Collector-emitter Voltage-Max
700mV
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
140V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX455 Datasheet
Download the complete datasheet for Diodes ZTX455 to view detailed technical specifications.
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