PNP bipolar junction transistor featuring a 60V collector-emitter breakdown voltage and 1A continuous collector current. This silicon transistor offers a 150MHz gain bandwidth product and a maximum power dissipation of 1W. Packaged in a TO-92 E-LINE package for through-hole mounting, it operates across a temperature range of -55°C to 200°C.
Frequency150MHz
PackageTO-92
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Diodes ZTX551 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-350mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
350mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
4.01mm
Length
4.77mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-60V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX551 Datasheet
Download the complete datasheet for Diodes ZTX551 to view detailed technical specifications.
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