NPN bipolar junction transistor (BJT) for small signal applications. Features a 160V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 1A. This silicon transistor offers a maximum power dissipation of 1W and a transition frequency of 250MHz. Housed in a TO-92 compatible E-LINE package, it supports through-hole mounting and operates within a temperature range of -55°C to 200°C. The component is lead-free and RoHS compliant.
PackageTO-92
Current Rating1A
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Diodes ZTX601 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
1.2V
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
10V
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
1A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
160V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX601 Datasheet
Download the complete datasheet for Diodes ZTX601 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
