The ZTX753STZ:LEADED PNP transistor features a collector base voltage of 120V, collector emitter voltage of 100V, and emitter base voltage of 5V. It operates at a frequency of 140MHz and can withstand temperatures between -55°C and 200°C. The transistor is mounted through a hole and packaged in a box. Its power dissipation is 1W.
Frequency140MHz
MountingThrough Hole
PolarityPNP
Power1W
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Technical Specifications
Diodes ZTX753STZ:LEADED technical specifications.
General
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Voltage (VCEO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 140MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Box |
| Polarity | PNP |
| Power Dissipation | 1W |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX753STZ:LEADED Datasheet
Download the complete datasheet for Diodes ZTX753STZ:LEADED to view detailed technical specifications.
No datasheet is available for this part.