PNP silicon bipolar junction transistor in a TO-92 compatible E-Line package. Features a 400V collector-emitter breakdown voltage (V(BR)CEO) and a continuous collector current of -500mA. Offers a maximum power dissipation of 1.2W and a transition frequency of 85MHz. Designed for through-hole mounting, this lead-free component operates within a temperature range of -55°C to 150°C.
Diodes ZTX958 technical specifications.
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