ZVN4310GTA

N-Channel MOSFET, 100V Drain-Source Voltage (Vdss), 1.67A Continuous Drain Current (ID), and 540mR Max Drain-Source On Resistance (Rds On). This silicon Metal-oxide Semiconductor FET features a 1-element, 1-channel design in a SOT-223 surface-mount package. Key specifications include a 20V Gate-to-Source Voltage (Vgs), 3W Max Power Dissipation, and fast switching times with an 8ns Turn-On Delay Time and 16ns Fall Time. Operating temperature range is -55°C to 150°C, with RoHS compliance.