The EPC2206 is an enhancement mode Gallium Nitride (GaN) power transistor designed for high-performance power conversion applications. It features a drain-to-source voltage of 80 V and an exceptionally low on-resistance of 2.2 mΩ. As an eGaN FET, it offers zero reverse recovery (Qrr) and significantly lower gate charge than traditional silicon MOSFETs, enabling high switching frequencies and high efficiency in a compact die-level package. It is AEC-Q101 qualified for automotive applications.
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| Drain-to-Source Voltage (VDS) | 80V |
| Drain-Source On Resistance (RDS(on)) | 2.2mΩ |
| Continuous Drain Current (ID) | 90A |
| Pulsed Drain Current (ID pulsed) | 390A |
| Gate-to-Source Voltage (VGS) | -4 to 6V |
| Total Gate Charge (Qg) | 19nC |
| Gate-to-Source Threshold Voltage (VGS(th)) | 0.8 to 2.5V |
| Input Capacitance (Ciss) | 1940pF |
| Operating Temperature Range | -40 to 150°C |
| Die Size | 6.05 x 2.3mm |
| RoHS | Yes |
| Automotive Qualification | AEC-Q101 |
| Halogen Free | Yes |
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