Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18,
Silicon Controlled Rectifier, 2A I(T)RMS, 1600mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-39, TO-39, 3 PIN