0402 Ceramic Inductor 2.7nH 120mR 640mA -55°C to 125°C
Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN
Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, CERDIP-14
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14
SN78382N
