Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
600V 20A aMOS MOSFET, TO-263-3 Package, -55°C to 150°C
Power Field-Effect Transistor, 20A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3/2
