Search Results for "DU1971-101M"

Inductor Power Unshielded Wirewound 100uH 20% 100KHz 1.8A 0.19Ohm DCR T/R

Inductor Power Unshielded Wirewound 1000uH 20% 100KHz 0.56A 1.8Ohm DCR T/R

Inductor Power Unshielded Wirewound 10uH 20% 100KHz 4.3A 0.031Ohm DCR T/R

Inductor Power Unshielded Wirewound 470uH 20% 100KHz 0.82A 0.85Ohm DCR T/R

Inductor Power Unshielded Wirewound 47uH 20% 100KHz 2.6A 0.086Ohm DCR T/R

Inductor Power Unshielded Wirewound 1uH 20% 100KHz 8.6A 0.009Ohm DCR T/R

Inductor Power Unshielded Wirewound 100uH 20% 100KHz 1.2A 0.22Ohm DCR T/R

Inductor Power Unshielded Wirewound 100uH 20% 100KHz 0.6A 0.84Ohm DCR T/R

Inductor Power Unshielded Wirewound 100uH 20% 100KHz 1.3A 0.28Ohm DCR T/R

Inductor Power Unshielded Wirewound 100uH 20% 100KHz 0.3A 1.27Ohm DCR T/R

BATTERY HOLDER AA 6 CELL

BATT CNTCT SPRING AA 6 LEADS

Inductor Power Unshielded Wirewound 10uH 20% 100KHz 3.9A 0.038Ohm DCR T/R

Inductor Power Unshielded Wirewound 10uH 20% 100KHz 2A 0.11Ohm DCR T/R

Inductor Power Unshielded Wirewound 1000uH 20% 100KHz 0.1A 2Ohm DCR T/R

Inductor Power Unshielded Wirewound 1000uH 20% 100KHz 0.05A 8.4Ohm DCR T/R

Inductor Power Unshielded Wirewound 1000uH 20% 100KHz 0.3A 3Ohm DCR T/R

Inductor Power Unshielded Wirewound 10uH 20% 100KHz 3.5A 0.04Ohm DCR T/R

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,