600V 35A N-CH Power MOSFET TO-247
Power Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, LEAD FREE PACKAGE-3
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, FULL PACK-3
Inductor RF Molded Wirewound 0.1uH 20% 100MHz 28Q-Factor Non Magnetic 0.45A 0.44Ohm DCR 1210 T/R
Other Modules 10 PTS, NPN OUT PCB
Inductor RF Molded Wirewound 0.1uH 20% 25.2MHz 28Q-Factor Non Magnetic 0.45A 0.44Ohm DCR 1812 T/R
Inductor RF Molded Wirewound 0.1uH 20% 25.2MHz 28Q-Factor 0.45A 0.44Ohm DCR 1812 T/R
Inductor RF Shielded/Molded Wirewound 0.1uH 20% 50MHz 36Q-Factor 0.45A 0.5Ohm DCR 1210 T/R
RF Inductors .10uH 25.2MHz
Fixed Inductors .10uH 1MHz
RF Inductors .10uH 1MHz
R/W HEAD W/10M ROBOT CABLE
Shielded Power Inductor 100nH 20% 43A SMD
Ind Chip 100nH 20% 25MHz 15 50mA T/R
Inductor Power Shielded Wirewound 0.1uH 20% 100KHz Iron 32A 0.0011Ohm DCR T/R
Inductor Power Shielded Wirewound 0.1uH 20% 100KHz 17A 0.0039Ohm DCR
Inductor Power Shielded Wirewound 0.1uH 20% 200KHz 55A 0.0005Ohm DCR T/R
FIXED IND 100NH 30A 1.7 MOHM SMD
Shielded Power Inductor 100nH 32.5A 1.7mR SMD
