Search Results for "FLL200IB-3"

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN

FET, P Channel, ID 12 A

FET, P Channel, ID 12 A

FET, P Channel, ID 12 A

FET, P Channel, ID 32 A

Trans FET 32V

Trans FET 32V

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, MK, 2 PIN

Trans FET 32V

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, IK, 2 PIN

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, CASE IX, 2-PIN

High Voltage - High Power GaAs FET

High Voltage - High Power GaAs FET

Trans FET 32V

FET Transistor, L,S-band High Power GaAs FET

Trans FET 32V

Trans RF FET 32V

High Voltage - High Power GaAs FET