IRHNJ9A7130B - Electronic Components Search

Power Field-Effect Transistor, 11A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ93130

International Rectifier

Power Field-Effect Transistor, 11A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ9130SCS

International Rectifier

Trans MOSFET P-CH 100V 11A 3-Pin SMD-0.5

Datasheet

Volume Production

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ9130SCV

International Rectifier

Trans MOSFET P-CH 100V 11A 3-Pin SMD-0.5

Datasheet

Volume Production

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ93130SCS

International Rectifier

Trans MOSFET P-CH 100V 11A 3-Pin SMD-0.5

Datasheet

Not Recommended for New Design

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ93130SCV

International Rectifier

Trans MOSFET P-CH 100V 11A 3-Pin SMD-0.5

Datasheet

Not Recommended for New Design

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ7230

International Rectifier

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ7130

Infineon

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

IRHNJ4230

Infineon

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ8230

International Rectifier

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ3130

Infineon

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

IRHNJ63130

International Rectifier

Trans MOSFET N-CH 100V 22A 3-Pin SMD-0.5

Datasheet

Not Recommended for New Design

Continuous Drain Current (ID): 22A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ63234

International Rectifier

Trans MOSFET N-CH 250V 12.4A 3-Pin SMD-0.5

Datasheet

Not Recommended for New Design

Continuous Drain Current (ID): 12.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ53034

Infineon

Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

IRHNJ67234

International Rectifier

Trans MOSFET N-CH 250V 12.4A 3-Pin SMD-0.5

Datasheet

Volume Production

Continuous Drain Current (ID): 12.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ54130

International Rectifier

Trans MOSFET N-CH 100V 22A 3-Pin SMD-0.5

Datasheet

Volume Production

Continuous Drain Current (ID): 22A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ57130

International Rectifier

Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 22A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ53Z30

Infineon

Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ67230

Infineon

Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ63C30

International Rectifier

Trans MOSFET N-CH 600V 3.4A 3-Pin SMD-0.5

Datasheet

Not Recommended for New Design

Continuous Drain Current (ID): 3.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ9130

International Rectifier

Power Field-Effect Transistor, 11A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ93130

International Rectifier

Power Field-Effect Transistor, 11A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ9130SCS

International Rectifier

Trans MOSFET P-CH 100V 11A 3-Pin SMD-0.5

Datasheet

Volume Production

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ9130SCV

International Rectifier

Trans MOSFET P-CH 100V 11A 3-Pin SMD-0.5

Datasheet

Volume Production

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ93130SCS

International Rectifier

Trans MOSFET P-CH 100V 11A 3-Pin SMD-0.5

Datasheet

Not Recommended for New Design

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ93130SCV

International Rectifier

Trans MOSFET P-CH 100V 11A 3-Pin SMD-0.5

Datasheet

Not Recommended for New Design

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ7230

International Rectifier

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ7130

Infineon

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

IRHNJ4230

Infineon

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ8230

International Rectifier

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 9.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ3130

Infineon

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

IRHNJ63130

International Rectifier

Trans MOSFET N-CH 100V 22A 3-Pin SMD-0.5

Datasheet

Not Recommended for New Design

Continuous Drain Current (ID): 22A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ63234

International Rectifier

Trans MOSFET N-CH 250V 12.4A 3-Pin SMD-0.5

Datasheet

Not Recommended for New Design

Continuous Drain Current (ID): 12.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ53034

Infineon

Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

IRHNJ67234

International Rectifier

Trans MOSFET N-CH 250V 12.4A 3-Pin SMD-0.5

Datasheet

Volume Production

Continuous Drain Current (ID): 12.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ54130

International Rectifier

Trans MOSFET N-CH 100V 22A 3-Pin SMD-0.5

Datasheet

Volume Production

Continuous Drain Current (ID): 22A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ57130

International Rectifier

Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 22A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ53Z30

Infineon

Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ67230

Infineon

Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

Datasheet

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNJ63C30

International Rectifier

Trans MOSFET N-CH 600V 3.4A 3-Pin SMD-0.5

Datasheet

Not Recommended for New Design