Search Results for &quot; IXFR26N50 &quot;

N-CHANNEL MOSFET, 26A, 500V, 200mR, Through Hole, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 26A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 200mR

Drain to Source Voltage (Vdss): 500V

Littelfuse

Power Field-Effect Transistor, 24A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

IXFR26N50Q

Power Field-Effect Transistor, 24A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 200mR

Drain to Source Voltage (Vdss): 500V

Search Results for "IXFR26N50"

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N-CHANNEL MOSFET, 26A, 500V, 200mR, Through Hole, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Transferred

Continuous Drain Current (ID): 26A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 200mR

Drain to Source Voltage (Vdss): 500V

Littelfuse

Power Field-Effect Transistor, 24A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

ISOPLUS247, 3 PIN

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

IXFR26N50Q

Power Field-Effect Transistor, 24A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN