Search Results for &quot; IXGK64N60B3D1 &quot;

Insulated Gate Bipolar Transistor, 64A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN

TO-264, 3 PIN

Transferred

Package/Case: TO-264-3

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 600V

Collector-emitter Voltage-Max: 1.8V

Insulated Gate Bipolar Transistor,

Active

Insulated Gate Bipolar Transistor,

Active

IGBT 600V 64A 460W TO-247-3 Through Hole

PLUS247, 3 PIN

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 600V

Collector-emitter Voltage-Max: 1.8V

Input Type: STANDARD

Search Results for "IXGK64N60B3D1"

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Insulated Gate Bipolar Transistor, 64A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN

TO-264, 3 PIN

Transferred

Package/Case: TO-264-3

Collector Emitter Breakdown Voltage: 600V

Collector Emitter Saturation Voltage: 600V

Collector-emitter Voltage-Max: 1.8V

Insulated Gate Bipolar Transistor,

Active

Insulated Gate Bipolar Transistor,

Active

IGBT 600V 64A 460W TO-247-3 Through Hole