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IGBT 650V 118A 455W TO-247-3 Through Hole

Volume Production

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 650V

Collector Emitter Saturation Voltage: 1.8V

Collector-emitter Voltage-Max: 2.2V

Insulated Gate Bipolar Transistor,

Active

IGBT 650V 116A 380W TO-247-3 Through Hole

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 650V

Collector Emitter Saturation Voltage: 1.7V

Collector Emitter Voltage (VCEO): 650V

IGBT 650V 116A 455W TO-247-3 Through Hole

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 650V

Collector Emitter Saturation Voltage: 1.7V

Collector-emitter Voltage-Max: 2V

Insulated Gate Bipolar Transistor,

Active

Insulated Gate Bipolar Transistor,

Active

Insulated Gate Bipolar Transistor,

,

Active

Insulated Gate Bipolar Transistor,

Transferred