Search Results for &quot; IXYH30N120C3 &quot;

Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel,

TO-247AD

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 3.7V

Collector Emitter Voltage (VCEO): 1.2kV

Insulated Gate Bipolar Transistor,

Active

IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT

Volume Production

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 3.7V

Collector-emitter Voltage-Max: 3.3V

Insulated Gate Bipolar Transistor,

Active

Search Results for "IXYH30N120C3"

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Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel,

TO-247AD

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 3.7V

Collector Emitter Voltage (VCEO): 1.2kV

Insulated Gate Bipolar Transistor,

Active

IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT

Volume Production

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 3.7V

Collector-emitter Voltage-Max: 3.3V

Insulated Gate Bipolar Transistor,