Search Results for "JAN2N7225"

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Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3

FLANGE MOUNT, S-CSFM-P3

Obsolete

Package/Case: TO-254-3

Continuous Drain Current (ID): 27.4A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3

U3, U PKG-3

Obsolete

Continuous Drain Current (ID): 27.4A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3

FLANGE MOUNT, S-CSFM-P3

Obsolete

Package/Case: TO-254-3

Continuous Drain Current (ID): 27.4A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3

U3, U PKG-3

Obsolete

Continuous Drain Current (ID): 27.4A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C