Search Results for "MGFC50G5867"

RF Power Field-Effect Transistor,

Wide Band Low Power Amplifier, 21000MHz Min, 24000MHz Max, GAAS,

Wide Band Medium Power Amplifier, 18000MHz Min, 19000MHz Max, GAAS, DIE-15

Wide Band Medium Power Amplifier, 18000MHz Min, 19000MHz Max, GAAS, DIE-12

Wide Band Low Power Amplifier, 37000MHz Min, 43000MHz Max, DIE-15

Wide Band Medium Power Amplifier, 27500MHz Min, 30000MHz Max, GAAS, DIE-15

Wide Band Medium Power Amplifier, 21200MHz Min, 23600MHz Max, GAAS, DIE-14

Wide Band Low Power Amplifier, 37000MHz Min, 40000MHz Max, GAAS,

Wide Band Low Power Amplifier, 27000MHz Min, 30000MHz Max, GAAS,

Wide Band Medium Power Amplifier, 27500MHz Min, 30000MHz Max, DIE-14

Wide Band Medium Power Amplifier, 24500MHz Min, 26500MHz Max, GAAS, DIE-14

Wide Band Low Power Amplifier, 24000MHz Min, 27000MHz Max, GAAS,

Wide Band Medium Power Amplifier, 37000MHz Min, 43000MHz Max, GAAS, DIE-16

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN