IGBT MODULE, SIX, 1.2KV, 115A; Transistor Polarity:Six NPN; DC Collector Current:115A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes
Insulated Gate Bipolar Transistor, 44A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 1, 24 PIN
Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 1, 42 PIN
