The FBG20N18BC is a 200V radiation-hardened enhancement-mode gallium nitride (eGaN) High Electron Mobility Transistor (HEMT). Specifically designed for critical applications in satellite and high-reliability environments, it features high electron mobility and a low temperature coefficient, enabling very low drain-source resistance. Its lateral structure provides low gate charge and extremely fast switching speeds, facilitating higher power density and efficiency in DC-DC conversion and motor control applications within aerospace and defense sectors.
Temp Range-55 to 150°C
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Technical Specifications
EPC FBG20N18BC technical specifications.
General
| Drain-Source Voltage (VDS) | 200V |
| Continuous Drain Current (ID) | 18A |
| Max Drain-Source Resistance (RDS(on)) | 30mΩ |
| Max Total Gate Charge (QG) | 7nC |
| Gate Threshold Voltage (VGS(th)) | 0.8 to 2.5V |
| Operating Temperature Range | -55 to 150°C |
| Dimensions | 5.6 x 3.8mm |
| Pulsed Drain Current (IDM) | 72A |
Compliance
| Radiation Hardness | TID LDR/HDR Immune; SEE hardened up to 83.7 MeV/mg/cm2 |
| ECCN | 9A515.e |
| Itar | Not ITAR Controlled |
| Qualification Level | Developmental |
Datasheet
EPC FBG20N18BC Datasheet
Download the complete datasheet for EPC FBG20N18BC to view detailed technical specifications.
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