PackagePDIP
MountingThrough Hole
Power250mW
Quick Jump:
Technical Specifications
Everlight CNY65B technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Current Transfer Ratio | 200% |
| Fall Time | 18000ns |
| Forward Current | 75mA |
| Input Type | DC |
| Isolation Voltage | 8.2kV |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 5V |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Everlight CNY65B Datasheet
Download the complete datasheet for Everlight CNY65B to view detailed technical specifications.
No datasheet is available for this part.