Fuji Electric
1MBI3600U4D-170
FUJI ELECTRIC 1MBI3600U4D-170 IGBT Array & Module Transistor, N Channel, 4.8 kA, 2.57 V, 18.65 kW, 1.7 kV, Module
PackageModule
MountingPanel
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Technical Specifications
Fuji Electric 1MBI3600U4D-170 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2.57V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Height | 38mm |
| Length | 190mm |
| Max Collector Current | 3.6kA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 18.65kW |
| Mount | Panel |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Width | 140mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric 1MBI3600U4D-170 Datasheet
Download the complete datasheet for Fuji Electric 1MBI3600U4D-170 to view detailed technical specifications.
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