Fuji Electric
FGW25N120VD
FUJI ELECTRIC FGW25N120VD IGBT Single Transistor, 48 A, 1.85 V, 260 W, 1.2 kV, TO-247, 3 Pins
PackageTO-247
MountingThrough Hole
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Technical Specifications
Fuji Electric FGW25N120VD technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Height | 20.95mm |
| Length | 15.9mm |
| Max Collector Current | 25A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 260W |
| Mount | Through Hole |
| Reach SVHC Compliant | Unknown |
| Width | 5.03mm |
Compliance
| RoHS | Compliant |
Datasheet
Fuji Electric FGW25N120VD Datasheet
Download the complete datasheet for Fuji Electric FGW25N120VD to view detailed technical specifications.
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