
The IRF9332PBF is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of -9.8A and a drain to source breakdown voltage of -30V. The device is packaged in a SOIC package and is lead free. It is RoHS compliant and has a maximum power dissipation of 2.5W.
International Rectifier IRF9332PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -9.8A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 28.1mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 58ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.27nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.9V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.9V |
| Turn-Off Delay Time | 73ns |
| Turn-On Delay Time | 15ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF9332PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
