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Technical Specifications
Henkel ABLEBOND 8360 technical specifications.
General
| Technology | Epoxy |
| Appearance | Silver |
| Cure | Heat cure |
| Application | Die attach |
| Filler Type | Silver |
| pH | 4.2 |
| Thixotropic Index (0.5/5 rpm) | 4.2 |
| Viscosity, Brookfield CP51, 25 °C, Speed 5 rpm | 7900mPa·s (cP) |
| Work Life @ 25°C | 20hours |
| Shelf Life @ -40°C (from date of manufacture) | 1year |
| Coefficient of Thermal Expansion Below Tg | 45ppm/°C |
| Coefficient of Thermal Expansion Above Tg | 200ppm/°C |
| Glass Transition Temperature (Tg) by TMA | 88°C |
| Thermal Conductivity @ 121°C | 2.9W/mK |
| Tensile Modulus, DMTA @ -65 °C | 5800N/mm² (psi) |
| Tensile Modulus, DMTA @ 25 °C | 5000N/mm² (psi) |
| Tensile Modulus, DMTA @ 150 °C | 360N/mm² (psi) |
| Tensile Modulus, DMTA @ 250 °C | 270N/mm² (psi) |
| Extractable Ionic Content, Chloride (Cl-) @ 100°C | <20ppm |
| Extractable Ionic Content, Sodium (Na+) @ 100°C | <10ppm |
| Extractable Ionic Content, Potassium (K+) @ 100°C | <5ppm |
| Water Extract Conductivity | 15µmhos/cm |
| Weight Loss @ 300°C | 0.7% |
| Moisture Absorption @ Saturation, 85°C/85%RH | 0.55wt.% |
| Volume Resistivity | 0.0005ohms-cm |
| Die Shear Strength, 2 X 2 mm Si die, Substrate Ag/Cu leadframe @25°C | 11kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Ag/Cu LF @25°C | 29kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Ag/Cu LF @200°C | 1.3kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Ag/Cu LF @250°C | 1.0kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Bare Cu LF @25°C | 9.0kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Bare Cu LF @200°C | 0.82kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Bare Cu LF @250°C | 0.56kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Pd/Ni/Cu LF @25°C | 17kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Pd/Ni/Cu LF @200°C | 1.3kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Pd/Ni/Cu LF @250°C | 0.87kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Au BT-Resin Board @25°C | 32kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Au BT-Resin Board @200°C | 3.5kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Au BT-Resin Board @250°C | 2.5kg-f |
| Weight Loss on Cure, 10 x 10 mm Si die on glass slide | 3.4% |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Ag/Cu LF @25°C | 25kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Ag/Cu LF @200°C | 1.3kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Bare Cu LF @25°C | 10kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Bare Cu LF @200°C | 0.7kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Pd/Ni/Cu LF @25°C | 19kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Pd/Ni/Cu LF @200°C | 1.3kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 30°C/60% RH exposure for 192 hours, Substrate Au-BT Resin Board @25°C | 26kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 30°C/60% RH exposure for 192 hours, Substrate Au-BT Resin Board @200°C | 2.1kg-f |
| Chip Warpage (0.38 mm thick Si die on 0.2 mm thick Ag/Cu LF @ 25°C), Chip Size 7.6 x 7.6mm | 10µm |
| Chip Warpage (0.38 mm thick Si die on 0.2 mm thick Ag/Cu LF @ 25°C), Chip Size 10.2 x 10.2mm | 18µm |
| Chip Warpage (0.38 mm thick Si die on 0.2 mm thick Ag/Cu LF @ 25°C), Chip Size 12.7 x 12.7mm | 26µm |
| Chip Warpage (0.38 mm thick Si die on 0.48 mm Au BGA @ 25°C), Chip Size 7.6 x 7.6mm | 10µm |
| Chip Warpage (0.38 mm thick Si die on 0.48 mm Au BGA @ 25°C), Chip Size 10.2 x 10.2mm | 23µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.2 mm thick Ag/Cu LF), Post Cure | 12µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.2 mm thick Ag/Cu LF), Wirebond (1 min @ 250°C) | 15µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.2 mm thick Ag/Cu LF), Post Mold Bake (4 hrs @ 175°C) | 15µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.48 mm thick Au BGA), Post Cure | 10µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.48 mm thick Au BGA), Wirebond (1 min @ 250°C) | 11µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.48 mm thick Au BGA), Post Mold Bake (4 hrs @ 175°C) | 9.2µm |
| Typical Curing Schedule | 1 hour @ 175°C |
| Alternative Cure Schedule for Metal Leadframe Die Attach | 5°C per minute ramp to 175°C + 1 hour @ 175°C |
| Alternative Cure for BGA Die Attach | 2 hours @ 100°C + 30 minute ramp to 175°C + 1 hour @ 175°C |
| Syringe Thaw Time for 1cc syringe | 10-15minutes |
| Syringe Thaw Time for 3cc syringe | 15-20minutes |
| Syringe Thaw Time for 10cc syringe | 30-35minutes |
| Syringe Thaw Time for 30cc syringe | 45-50minutes |
Compliance
| Cage Code | D8908 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Henkel ABLEBOND 8360 Datasheet
Download the complete datasheet for Henkel ABLEBOND 8360 to view detailed technical specifications.
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