Sign in to ask questions about the Henkel ABLEBOND 8360 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Henkel ABLEBOND 8360 technical specifications.
| Technology | Epoxy |
| Appearance | Silver |
| Cure | Heat cure |
| Application | Die attach |
| Filler Type | Silver |
| pH | 4.2 |
| Thixotropic Index (0.5/5 rpm) | 4.2 |
| Viscosity, Brookfield CP51, 25 °C, Speed 5 rpm | 7900mPa·s (cP) |
| Work Life @ 25°C | 20hours |
| Shelf Life @ -40°C (from date of manufacture) | 1year |
| Coefficient of Thermal Expansion Below Tg | 45ppm/°C |
| Coefficient of Thermal Expansion Above Tg | 200ppm/°C |
| Glass Transition Temperature (Tg) by TMA | 88°C |
| Thermal Conductivity @ 121°C | 2.9W/mK |
| Tensile Modulus, DMTA @ -65 °C | 5800N/mm² (psi) |
| Tensile Modulus, DMTA @ 25 °C | 5000N/mm² (psi) |
| Tensile Modulus, DMTA @ 150 °C | 360N/mm² (psi) |
| Tensile Modulus, DMTA @ 250 °C | 270N/mm² (psi) |
| Extractable Ionic Content, Chloride (Cl-) @ 100°C | <20ppm |
| Extractable Ionic Content, Sodium (Na+) @ 100°C | <10ppm |
| Extractable Ionic Content, Potassium (K+) @ 100°C | <5ppm |
| Water Extract Conductivity | 15µmhos/cm |
| Weight Loss @ 300°C | 0.7% |
| Moisture Absorption @ Saturation, 85°C/85%RH | 0.55wt.% |
| Volume Resistivity | 0.0005ohms-cm |
| Die Shear Strength, 2 X 2 mm Si die, Substrate Ag/Cu leadframe @25°C | 11kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Ag/Cu LF @25°C | 29kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Ag/Cu LF @200°C | 1.3kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Ag/Cu LF @250°C | 1.0kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Bare Cu LF @25°C | 9.0kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Bare Cu LF @200°C | 0.82kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Bare Cu LF @250°C | 0.56kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Pd/Ni/Cu LF @25°C | 17kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Pd/Ni/Cu LF @200°C | 1.3kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Pd/Ni/Cu LF @250°C | 0.87kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Au BT-Resin Board @25°C | 32kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Au BT-Resin Board @200°C | 3.5kg-f |
| Die Shear Strength, 3 X 3 mm Si die, Substrate Au BT-Resin Board @250°C | 2.5kg-f |
| Weight Loss on Cure, 10 x 10 mm Si die on glass slide | 3.4% |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Ag/Cu LF @25°C | 25kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Ag/Cu LF @200°C | 1.3kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Bare Cu LF @25°C | 10kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Bare Cu LF @200°C | 0.7kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Pd/Ni/Cu LF @25°C | 19kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 85°C/85% RH exposure for 168 hours, Substrate Pd/Ni/Cu LF @200°C | 1.3kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 30°C/60% RH exposure for 192 hours, Substrate Au-BT Resin Board @25°C | 26kg-f |
| Die Shear Strength, 3 X 3 mm Si die, After 30°C/60% RH exposure for 192 hours, Substrate Au-BT Resin Board @200°C | 2.1kg-f |
| Chip Warpage (0.38 mm thick Si die on 0.2 mm thick Ag/Cu LF @ 25°C), Chip Size 7.6 x 7.6mm | 10µm |
| Chip Warpage (0.38 mm thick Si die on 0.2 mm thick Ag/Cu LF @ 25°C), Chip Size 10.2 x 10.2mm | 18µm |
| Chip Warpage (0.38 mm thick Si die on 0.2 mm thick Ag/Cu LF @ 25°C), Chip Size 12.7 x 12.7mm | 26µm |
| Chip Warpage (0.38 mm thick Si die on 0.48 mm Au BGA @ 25°C), Chip Size 7.6 x 7.6mm | 10µm |
| Chip Warpage (0.38 mm thick Si die on 0.48 mm Au BGA @ 25°C), Chip Size 10.2 x 10.2mm | 23µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.2 mm thick Ag/Cu LF), Post Cure | 12µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.2 mm thick Ag/Cu LF), Wirebond (1 min @ 250°C) | 15µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.2 mm thick Ag/Cu LF), Post Mold Bake (4 hrs @ 175°C) | 15µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.48 mm thick Au BGA), Post Cure | 10µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.48 mm thick Au BGA), Wirebond (1 min @ 250°C) | 11µm |
| Chip Warpage (7.6 x 7.6 x 0.38 mm Si die on 0.48 mm thick Au BGA), Post Mold Bake (4 hrs @ 175°C) | 9.2µm |
| Typical Curing Schedule | 1 hour @ 175°C |
| Alternative Cure Schedule for Metal Leadframe Die Attach | 5°C per minute ramp to 175°C + 1 hour @ 175°C |
| Alternative Cure for BGA Die Attach | 2 hours @ 100°C + 30 minute ramp to 175°C + 1 hour @ 175°C |
| Syringe Thaw Time for 1cc syringe | 10-15minutes |
| Syringe Thaw Time for 3cc syringe | 15-20minutes |
| Syringe Thaw Time for 10cc syringe | 30-35minutes |
| Syringe Thaw Time for 30cc syringe | 45-50minutes |
| Cage Code | D8908 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Download the complete datasheet for Henkel ABLEBOND 8360 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
