The IDT 6116LA120TDB is a 16Kb asynchronous SRAM with an access time of 120ns. It operates at a maximum supply voltage of 5.5V and a minimum supply voltage of 4.5V, with a maximum supply current of 85mA. The device is packaged in a CDIP package, measuring 32.5mm in length, 7.62mm in width, and 3.56mm in thickness. It is designed to operate over a temperature range of -55°C to 125°C and is not radiation hardened. The SRAM is available in a packaging quantity of 15 units per rail or tube.
PackageCDIP
Current85mA
MountingThrough Hole
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Technical Specifications
IDT 6116LA120TDB technical specifications.
General
| Access Time | 120ns |
| Address Bus Width | 11b |
| Package/Case | CDIP |
| Density | 16Kb |
| Interface | Parallel |
| Lead Free | Contains Lead |
| Length | 32.5mm |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Supply Voltage | 5.5V |
| Memory Size | 16Kb |
| Memory Type | RAM, , SRAM - Asynchronous, SDR |
| Min Supply Voltage | 4.5V |
| Mount | Through Hole |
| Number of Ports | 1 |
| Number of Words | 2000 |
| Operating Supply Voltage | 5V |
| Package Quantity | 15 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Supply Current | 85mA |
| Sync/Async | Asynchronous |
| Thickness | 3.56mm |
| Width | 7.62mm |
| Word Size | 8b |
Compliance
| RoHS | Not CompliantNo |
Datasheet
IDT 6116LA120TDB Datasheet
Download the complete datasheet for IDT 6116LA120TDB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.