
The QS3306AS1G is a dual 2-bit CMOS switch from IDT, featuring high level output currents of up to -120mA and low level output currents of up to 120mA. It operates within a supply voltage range of 4.75V to 5.25V and has a maximum power dissipation of 500mW. The device is packaged in a SOIC package and is suitable for surface mount applications. It has a propagation delay of 0.25ns and a turn-on delay time of 6.5ns. The QS3306AS1G is RoHS compliant and operates within a temperature range of -40°C to 85°C.
IDT QS3306AS1G technical specifications.
| Package/Case | SOIC |
| High Level Output Current | -120mA |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Low Level Output Current | 120mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 500mW |
| Max Supply Voltage | 5.25V |
| Min Supply Voltage | 4.75V |
| Mount | Surface Mount |
| Number of Bits | 2 |
| Number of Elements | 2 |
| Number of Switches | 2 |
| Operating Supply Voltage | 5V |
| Package Quantity | 97 |
| Packaging | Rail/Tube |
| Propagation Delay | 0.25ns |
| Quiescent Current | 3uA |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | QS3306A |
| Supply Current | 3uA |
| Technology | CMOS |
| Thickness | 1.5mm |
| Turn-On Delay Time | 6.5ns |
| Width | 3.9mm |
| RoHS | Compliant |
Download the complete datasheet for IDT QS3306AS1G to view detailed technical specifications.
No datasheet is available for this part.