The ISC0702NLSATMA1 is an OptiMOS™ 5 low-voltage N-channel power MOSFET from Infineon Technologies. It is optimized for high-frequency switching and specifically designed for use in chargers, adapters, and power conversion applications. It features a drain-source voltage of 60V, a low RDS(on) of 2.8 mΩ, and a continuous drain current of up to 135A. The component is housed in a compact PG-TDSON-8 package (SuperSO8) which provides superior thermal resistance and high robustness.
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Technical Specifications
Infineon Technologies ISC0702NLSATMA1 technical specifications.
General
| Drain-Source Breakdown Voltage (Vds) | 60V |
| Continuous Drain Current (Id) at Tc=25°C | 135A |
| Continuous Drain Current (Id) at Ta=25°C | 23A |
| Static Drain-Source On-Resistance (Rds on) max at Vgs=10V | 2.8mOhms |
| Static Drain-Source On-Resistance (Rds on) max at Vgs=4.5V | 3.5mOhms |
| Total Gate Charge (Qg) typ at Vgs=10V | 42nC |
| Total Gate Charge (Qg) typ at Vgs=4.5V | 21nC |
| Gate Threshold Voltage (Vgs th) typ | 1.7V |
| Power Dissipation (Pd) max at Tc=25°C | 100W |
| Power Dissipation (Pd) max at Ta=25°C | 3W |
| Maximum Operating Temperature | 175°C |
| Minimum Operating Temperature | -55°C |
| Transistor Polarity | N-Channel |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
| REACH | Contains SVHC |
Datasheet
Infineon Technologies ISC0702NLSATMA1 Datasheet
Download the complete datasheet for Infineon Technologies ISC0702NLSATMA1 to view detailed technical specifications.
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