Infineon
BSC020N03LSG
Power Field-Effect Transistor, 28A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
PackageTO-262-3
Quick Jump:
Technical Specifications
Infineon BSC020N03LSG technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 7.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Rds On Max | 2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC020N03LSG Datasheet
Download the complete datasheet for Infineon BSC020N03LSG to view detailed technical specifications.
No datasheet is available for this part.
Product Images
