N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 11.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 170mΩ Rds On resistance and 40W power dissipation. Designed for switching applications, it operates within a -55°C to 150°C temperature range and is packaged in a TO-220-3 configuration. Key switching parameters include a 15ns turn-on delay and 40ns fall time.
PackageTO-220-3
Current Rating11.5A
PolarityN-CHANNEL
Power40W
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Technical Specifications
Infineon BTS113A technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11.5A
Current Rating
11.5A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
170mR
Drain to Source Voltage (Vdss)
60V
Fall Time
40ns
Gate to Source Voltage (Vgs)
10V
Halogen Free
Not Halogen Free
Input Capacitance
560pF
Lead Free
Contains Lead
Max Dual Supply Voltage
60V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Rds On Max
170mR
RoHS Compliant
No
Series
TEMPFET®
Turn-Off Delay Time
45ns
Turn-On Delay Time
15ns
DC Rated Voltage
60V
Compliance
RoHS
Not Compliant
Datasheet
Infineon BTS113A Datasheet
Download the complete datasheet for Infineon BTS113A to view detailed technical specifications.
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